Adhesion Aspects in MEMS/NEMS by Seong H. Kim, Michael T. Dugger, Kash L. Mittal

By Seong H. Kim, Michael T. Dugger, Kash L. Mittal

Phenomena linked to the adhesion interplay of surfaces were a severe point of micro- and nanosystem improvement and function because the first MicroElectroMechanicalSystems(MEMS) have been fabricated. those phenomena are ubiquitous in nature and are found in all structures, despite the fact that MEMS units are fairly delicate to their results as a result of their small measurement and constrained actuation strength which may be Read more...

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In this analysis, however, PLJa was calculated from the attractive forces of contacting asperities given by equation (16). In contrast to the prior method, attractive pressure from noncontacting asperities was taken into account in the mean height plane LJ pressure PLJ . If we denote asperity height by z, mean asperity height by zm , and asperity height distribution density function by φ(z − zm ) in the z-coordinate shown in Fig. 1, asperity elastic contact pressure Pela , asperity LJ pressure PLJa and real contact area ratio ARa are, respectively, given by ∞ 4 1/2 Pela = E ∗ ρRa 3 (z − d)3/2 φ(z) dz, (23) d ∞ PLJa = 2πRa γρ φ(z) dz, (24) d ∞ ARa = πRa ρ (z − d)φ(z) dz.

The product of the meniscus area and the Laplace pressure, equal to the capillary force, remains finite and decreases as the liquid contact angle increases. However, the validity of the continuum theory is questionable in this low pressure regime. 03. 03. 4. Conclusion The importance of taking into account the adsorbate film is explained theoretically. Unless the partial pressure of the molecule in the gas phase (p/psat ) is extremely low (as in ultra-high vacuum conditions), the adsorbate film will exist on the solid surface.

7) Here, h is the equilibrium thickness of the film, υ is the liquid film molecular volume, kB is Boltzmann’s constant, T is the temperature and p/psat is the relative vapor pressure. , the Gibbs free energy per molecule. 31 D. B. Asay et al. / Adhesion Aspects in MEMS/NEMS (2010) 25–44 Changing (5) to its molecular form and equating it to (7), we have P (h) = (8) P. For an undersaturated vapor, ln(p/psat ) is negative, so the pressures are negative and equal to each other, and both are in thermodynamic equilibrium with the vapor at partial pressure p/psat .

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